 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| New Product SI5920DC Vishay Siliconix Dual N-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () 0.032 at VGS = 4.5 V 8 0.036 at VGS = 2.5 V 0.045 at VGS = 1.8 V 0.054 at VGS = 1.5 V ID (A) 4a 4a 4a 4a 7.3 nC Qg (Typ) FEATURES * TrenchFET(R) Power MOSFET: 1.5 V Rated * Ultra -low on-resistance in compact, thermally enhanced ChipFET(R) package RoHS COMPLIANT APPLICATIONS * Load switch for portable applications - Guaranteed operation at VGS = 1.5 V critical for opti mized design and space savings 1206-8 ChipFET(R) (Dual) 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 D2 Marking Code CD XXX Part # Code G1 Lot Traceability and Date Code S1 N-Channel MOSFET G2 Bottom View S2 N-Channel MOSFET Ordering Information: SI5920DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C d, e Symbol VDS VGS ID IDM IS Limit 8 5 4a 4a 4a 4a 25 2.6 1.7c 3.12 2.0 2.04b, c 1.3b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t 5 sec 50 60 Maximum Junction-to-Ambientb, f C/W RthJF 30 40 Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 C/W. Document Number: 73490 S-70914-Rev. C, 07-May-07 www.vishay.com 1 New Product SI5920DC Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 5 V VDS = 8 V, VGS = 0 V VDS = 8 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.8 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 6.3 A VGS = 1.8 V, ID = 2.5 A VGS = 1.5 V, ID = 1.8 A Forward Transconductancea gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 2.6 A, di/dt = 100 A/s, TJ = 25 C IS = 2.6 A, VGS = 0 V 0.8 12 3 7 5 TC = 25 C VDD = 4 V, RL = 0.73 ID 5.5 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 4 V, VGS = 5 V, ID = 6.8 A VDS = 4 V, VGS = 4.5 V, ID = 6.8 A VDS = 4 V, VGS = 0 V, f = 1 MHz VDS = 4 V, ID = 6.8 A Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 2.6 25 1.2 18 5 A V ns nC ns 680 230 140 8 7.3 0.84 1.26 1.8 8 11 18 7 2.7 12 17 27 11 ns 12 11 nC pF 25 0.025 0.0285 0.036 0.041 18 0.032 0.036 0.045 0.054 S 0.3 8 8.2 - 2.6 1 100 1 10 V mV/C V ns A A Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73490 S-70914-Rev. C, 07-May-07 New Product SI5920DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 8 20 I D - Drain Current (A) I D - Drain Current (A) VGS = 5 thru 2 V VGS = 1.8 V 6 TC = - 55 C 4 TC = 25 C TC = 125 C 2 15 VGS = 1.5 V 10 5 VGS = 1 V 0 0.0 1.0 2.0 3.0 0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.06 rDS(on) - D to S On-Resistance () VGS = 1.5 V 1000 900 800 0.05 C - Capacitance (pF) 700 600 500 400 300 200 100 0.02 0 5 10 15 20 25 30 0 0 1 Transfer Characteristics Ciss 0.04 VGS = 1.8 V 0.03 VGS = 2.5 V VGS = 4.5 V Coss Crss 2 3 4 5 6 7 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) rDS(on) vs. Drain Current 5 ID = 6.8 A V GS - Gate-to-Source Voltage (V) 4 VDS = 6.4 V rDS(on) - On-Resistance (Normalized) VDS = 4 V 3 1.4 1.6 Capacitance VGS = 4.5 V, ID = 5 A VGS = 1.5 V, ID = 1.8 A 1.2 2 1.0 VGS = 2.5 V, ID = 4.8 A VGS = 1.8 V, ID = 2.5 A 1 0.8 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 73490 S-70914-Rev. C, 07-May-07 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SI5920DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10.0 rDS(on) - Drain-to-Source On-Resistance () 0.06 0.05 TA = 125 C 0.04 I S - Source Current (A) TA = 150 C 1.0 TA = 25 C 0.03 TA = 25 C 0.02 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp 0.9 0.8 0.7 VGS(th) (V) 0.6 0.5 0.4 10 0.3 0.2 - 50 0 10-4 Power (W) 30 ID = 250 A 40 50 rDS(on) vs. VGS vs. Temperature 20 - 25 0 25 50 75 100 125 150 10-3 10-2 10-1 Time (sec) 1 10 100 600 TJ - Temperature (C) Threshold Voltage 100 *Limited by rDS(on) 10 ms 10 I D - Drain Current (A) 100 ms 1s 10 s 1 dc Single Pulse Power 0.1 T = 25 C A Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 73490 S-70914-Rev. C, 07-May-07 New Product SI5920DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 4 8 3 ID - Drain Current (A) 6 Package Limited 4 Power Dissipation (W) 2 1 2 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* 2 1 Duty Cycle = 0.5 Power Derating Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 90 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73490 S-70914-Rev. C, 07-May-07 www.vishay.com 5 New Product SI5920DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73490. www.vishay.com 6 Document Number: 73490 S-70914-Rev. C, 07-May-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SI5920DC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |